Classification and application of sensors
04
16
There are many classification methods of sensors. There are usually 4 methods:1. Divided into: displacement sensor, pressure sensor, speed sensor temperature sensor and gas sensitive sensor according to the input physical quantity. 2. Based on the working principle: resistance, inductance, capacitance, and potential. 3. Based on the nature of the output signal: analog sensor and digital sensor. 4. Based on the principle of energy conversion, it is divided into: active sensors and passive sensors. The source sensor converts non -electrical energy to electrical energy, such as electric momentum, charge -type sensors, etc.; The passive sensor does not afford the energy conversion effect, but the amount of non -electrical volume is rotated to the number of electrical parameters, such as resistance, inductive sensors The types of commonly used sensorsUsually, according to its basic perception function, it can be divided into ten major ten major majority of thermist components, optical components, osteitted components, Lijin components, magnetic sensitivity elements, wet sensitivity components, sound sensitivity elements, radiation sensitive components, color sensitivity components, and Weimin components. kind. 1. Heat sensorThe thermist sensor is a conversion device that converts temperature into a telecommunications signal, which can be divided into two categories: active and passive. The former's working principle is thermal release effect, thermal power effect, and semiconductor knotting effect. The working principle of the latter is the thermal characteristics of the resistance, accounting for about 55%of the thermist sensor. This sensor is more applicable in the occasion where the temperature detection accuracy is relatively high. The broader thermal resistance materials are platinum, copper, nickel, etc. They have the characteristics of large resistance temperature coefficients, good linearity, stable performance, wide use temperature range, and easy processing. It is used to measure temperature within the range of -200 ℃ ~+500 ℃. 2. Optical sensorThe light sensor is one of the most common sensors. There are many types, mainly: optical pipes, photoelectric multiplication pipes, photoresist resistance, solar cells, solar batteries, infrared sensors, ultraviolet sensors, fiber optoelectronics sensors, color sensors, CCDs and CCD and CMOS image sensor, etc. Major domestic manufacturers include the OTRON brand. The light sensor is one of the most output and the most widely used sensor. It occupies a very important position in automatic control and non -electrical electricity testing technology. The easiest light sensor is the light resistance, and the current will generate current when the photon shock junction is generated. 3. Qi -sensitive sensorQi -sensitive sensor is a sensor used to detect gas concentration and ingredients, which plays a very important role in environmental protection and safety supervision. The gas -sensitive sensor is exposed to the gas of various ingredients. Because the temperature and humidity of the detection site have changed a lot, there are a lot of dust and oil mist, so their working conditions are harsh, and the material of the gas to the sensing element is material. Chemical reactions are generated, attached to the surface of the component, often making their performance worse. Therefore, there is the following requirements for the gas -sensitive sensor: it can detect the allowable concentration of the alarm gas and the gas concentration of other standard values. It can work stable for a long time, good repetitiveness, fast response speed, and small effects caused by coexisting substances. 4. Limin sensorLimin sensor is a conversion device that converts mechanics such as stress and pressure into a electrical signal. The Limin sensor has various forms such as resistance, capacitance, inductance, voltage and current, and they each have advantages and disadvantages. It is widely used in various industrial self -control environments, involving water conservancy and hydropower, railway transportation, smart buildings, production self -control, aerospace, military, petrochemical, oil wells, electric power, ships, machine tools, pipelines and other industries. 5. Magnetic sensorHall sensors are a magnetic field sensor based on Hall effect, which is widely used in industrial automation technology, detection technology and information processing. Hall effect is the basic method of studying the performance of semiconductor materials. The Hall coefficient measured by Hall effect experiment can judge important parameters such as conductive type, load concentration, and load migration rate of semiconductor materials. The Hall effect sensor is a passive sensor. It must have external power supply to work. This feature allows it to detect the operation of low speed. 6. Wet sensitivity sensorThe wet sensor sensor can feel the external humidity changes and change the humidity into a device with the physical or chemical properties of the device material into a device with a useful signal. The characteristic requirements of the ideal wet sensitivity sensor are suitable for use within the wide temperature and wet range, and the measurement accuracy should be high; long service life and good stability; fast response speed, small wet stagnation difference, good reproducibility; sensitivity High, good linear, small temperature coefficients; simple manufacturing process, easy to produce in batches, simple conversion circuits, low cost; corrosion resistance, low temperature and high temperature characteristics, etc. 7. Sound sensorSound sensor is a sensor used for flow detection. The sensor can be set with power when wiring, and operates in a range mode of high/low sensitivity. The high -sensitivity volume is suitable for high -frequency signals that fluctuate at 40dB. The low -sensitivity range is applied to high -frequency signals from 28DB to 68DB. The sensor can operate alone by providing external power supply to control the device. Sound sensor is mainly used for solid flow detection. At the same time, the device can also be used for the detection of water pump air erosion and liquid leakage, and then generates sufficient sound alarm. 8. Radiation sensorAfter the material is radiated, it is irradiated. Some characteristics (such as refractive index) change. Collective referred to as radiation effects. For example, after some special ingredients (fiber -doped fiber) made of special ingredients, the refractive index changes. The receiving light intensity changes, so it can be made into a fiber radiation sensor. The role of radiation and material is the basis of all nuclear radiation sensors. 9. Visual sensorThe visual sensor has a pixel that captures the light from a whole image. The clearness and delicateness of the image are usually measured by resolution, which is represented by the number of pixels. The low cost and ease of visual sensor have attracted machine designers and craft engineers to integrate them into various types of applications that have relying on artificial, multiple photoelectric sensors, or unbridled applications at all. The industrial applications of visual sensors include inspection, measurement, measurement, directional, defect detection and separation. 10. Weimin sensor (electronic tongue)The electronic tongue is an analog tongue to analyze, identify and judge the sample measurement of samples, and use multiple statistical methods to process the obtained data, quickly reflect the overall quality information of the sample, and realize the identification and classification of samples. It is a detection technology based on the overall characteristics of the sample as the overall characteristic response signal that uses the multi -sensing arrays as the foundation to perceive the overall characteristics of the sample. It is mainly composed of three parts: the taste sensor array, the signal acquisition system and the mode recognition system.For more electronic conponents,please refer to:https://www.ciselec.com/en/products.html
0
Film 3D integrated circuit key technology
03
20
1. BackgroundIn recent decades, with the development of micro -electronic technology, high -performance, small, and low -cost electronic products have become the basic demand for the market. The number of components can be accommodated on the integrated circuit that meets the prediction of Moore's law. However, in recent years, the growth trend of traditional integrated circuits has begun to have different models from the ideal model of Moore's law. With the rapid development of mobile phones and various electronic products, the functions of chips are becoming more and more complicated. The number of transistors on the chip is increasing, and it has also caused the increase in the volume of integrated circuits and increased power consumption. When the grid length and oxidation layer thickness of the transistor is close to the physical limit, the two -dimensional integration will eventually reach the end of the road. The three -dimensional integration technology that follows Moore's law can be used as a solution to the above problems. The concept of the three -dimensional integration method is based on the new position of the integrated circuit: Z axis. This means that the location of the chip is no longer limited to the X-Y two-dimensional plane. Therefore, we can achieve a larger density integrated circuit stack to shorten the interconnection and reduce the visible surface, thereby reducing the size of the chip and improving the efficiency of the chip, thereby improving the application range. In addition, the three -dimensional integrated scheme can combine the optimal process of different integrated circuits itself to avoid the problem of low efficiency and low yield. Although three -dimensional integration has many advantages, its material selection, the physical design and testing methods of thermal drive are the current problems to be solved. This article summarizes the wafer -grade three -dimensional integrated circuit technology. In three -dimensional integration technology, the popular and highly reliable popular technology is silicon -based perforation technology. In the following narrative, this key technology will also be introduced. At the same time, several different types of wafers and stacking methods, as well as challenges such as test methods, reliability, material selection such as 3D integration. This information will provide guidelines and reference for researchers interested in this area. 2. The key technologies for wafer -level 3D integrationThe wafer -level three -dimensional integration is a new concept that uses many advanced technologies to increase the increase in circuit density and the size of the volume. In this article, the three most important technologies are introduced. 2.1 Apity and key combinationPoor circuit failure or reliability in uncertainty. Therefore, the yield of the chip contact area and the three -dimensional integrated circuit stacked by the high and low of the accuracy. The accuracy of the alignment is related to the alignment marker. It is also affected by the personal experience of the operator. Copper is widely used in standard CMOS manufacturing. Therefore, copper is the best choice to connect two device layers or wafers in three -dimensional integration. The principle of the copper wafer bond is to make two chips contact and then heat up. During the key combination, the copper layer of the two chips can diffuse from each other to complete the key combination process. The integration quality is related to the cleanliness and bonding time of the wafer surface. Generally speaking, the temperature can be completed at least 300 to 400 ° C. You can determine the key quality according to the form of the interface. In order to obtain the results of the combined copper chip bond, the condition is heated for 30 minutes at 400 ° C, and then annealing at 400 ° C nitrogen environment for 30 or 60 minutes. Although high temperature and high voltage may improve the quality of the bonding, the corresponding cost and the loss of equipment have also become the main problems that need to be concerned. Therefore, the key combination method at lower temperature and pressure is the main purpose of three -dimensional integration. 2.2 Wall thinning technologyThe three -dimensional integration technology has greatly increased the density of integrated circuit and also brings the problem of heat dissipation difficulties. Due to the resistance between the silicon -based plate and the metal material, when the current is passed, there will be a thermal effect. The constant heat generation will cause a internal stress on the back of the chip, and when the internal stress is large, it will directly rupture the chip and speed up the damage speed of the chip. By using the chip thinning process, not only can effectively reduce the internal resistance of integrated circuits, optimize the heat dissipation performance of each chip, but also improve the stability of the circuit and reduce the chip volume, and it is more in line with the trend of the overall miniaturization of the integrated circuit. 2.3 Silicon -based Plate Passage Technology (TSV)Silicon -based perforations (TSV) Make vertical pupils between chips and chips, between wafers and wafers to achieve the technology of interconnection between chips. This technology can maximize the density of the chip stacking in the three -dimensional direction. Therefore, after the chip of different substrates is integrated with a three -dimensional stack through the perforation technology of the silicon -based plate, it can not only shorten the metal wire and connected resistance, but also reduce the size of the chip. (1) First through the holes. The first -hole technology is to complete the pore production and the filling of the conductive material on the blank silicon wafer before the CMOS device is made. In this scheme, filling materials cannot be metal, such as copper. In addition, since there is no metal interconnection at this stage, the longitudinal width ratio of the hole process is less than the rear hole process. (2) Lacofori process. After the Beol is completed, the CMOS is about to be completed and the silicon wafer that is about to be completed and but has not yet been thinned. This technology includes drilling and filling process. In order not to damage equipment and circuits, it should be produced at a temperature environment lower than the thermal budget. (3) TSV process process. The perforation of the entire silicon -based plate can be roughly divided into two parts: the first part is the etching of the hole, and the second part is filled with the hole. The erosion of the perforation of the silicon -based plate depends on the thickness of the wafers after thinning. When the target etching depth is too deep, the opening size of the pores needs to be expanded accordingly, which also leads to an increase in chip size. Filling materials are also a problem that needs to be considered. Copper, tungsten, and polysilicon are typical silicon -based plate perforation filling materials. Among these materials, copper and tungsten can only be used in the rear hole scheme, and polysilicon can be used in the pores and the rear hole scheme.Copper is a compatible material, with fewer residual stress and good electronic performance, but it is difficult to fill the high -vertical width ratio. On the contrary, tungsten is easy to fill the high -width ratio, but its residual stress is a big problem. Polycrystalline silicon can be used in the athletic scheme of the perforation of the silicon -based plate, but its resistance is higher than the metal. Considering the advantages and disadvantages of each material, the choice of silicon -based plate perforated filling materials is of great significance for three -dimensional integration, especially for wafer -level three -dimensional integration. TSV preparation specific process steps are:(1) Thin the chip through the grinding and etching process.(2) Plugs on the chip through the laser melting method or reflecting the ion etching method.(3) Use the plasma chemical chemical gas sedimentation method (PECVD) to create the insulation layer on the side wall of the hole.(4) Remove the substrate oxidation layer at the bottom of the hole to expose the metal layer.(5) Fill the copper metal into the hole in the pores.(6) Remove the copper metal on the surface of the chip through chemical machinery grinding and etching. 3. Classification of wafers(1) Silicon. Body silicon is the most commonly used wafer material in wafer -grade three -dimensional integration. The reason is not only at its cost, but also a mature production process. Even when other types of chips are used as top chips, the bottom chip is usually a silicon chip. (2) Insulation silicon (SOI). The surface of the SOI chip has a covered oxidation layer that can be uniformly reduced, because the oxidation layer plays a role in hindering etching. The etching process can use mechanical grinding, wet etching, and dry etching. The most important thing is that the final thickness can be evenly reduced, and the use of SOI can achieve high -density three -dimensional integration. The SOI structure can effectively avoid the phenomenon of locking. However, the anti -static capacity of stacking structures may be reduced, and dense equipment layers also have potential heat dissipation problems. (3) Glass. Glass wafer in 3D integration is usually used to place top chips. Therefore, glass wafers used for this purpose are called carrier wafers. When the glass is temporarily attached to the top wafers, you can reduce the substrate of the top wafer. After the thin wafer bond is closed at the bottom of the wafer, remove the glass. The transparent characteristics of glass wafers also helps the results of good key combination. For various types of wafer stacks, we should notice that if any charger is exposed or the wafer is close to the wafer, the wafer may generate inductive charge. In the stacking process of two wafers, as long as a chip is charged, the electrostatic discharge event may occur. 4. Walls and stacking methodsAccording to the stacking direction of the two chips, it is divided into two different stack chips: face -to -face and face. The impact of the chip stacking direction is very huge, which will affect the symmetry of the circuit, the difficulty of manufacturing, and the interconnection of the capacitance. Both stacking methods have been applied to three -dimensional integrated applications. Even the common use of the two stack methods exists. (1) Facial stacking method. For these types of chips, the metal layer (facial) of the two chips is connected in the circuit through TSV. From the perspective of manufacturing technology, this integration method is easy to invest and does not require additional processing chips. But it is necessary to consider the symmetry of wafers to wafers. This means that when designing the top chip, the circuit needs to perform mirror operation. At the same time, we must also consider the symmetry and confrontation of the two chips. (2) Facing the back stacking method. Facing the back wafer, the metal layer (face) of a chip is connected to the substrate (back) of another chip through the TSV, and the wafer (wafer or top wafer) should be thinned. Compared with the face type, this method increases the complexity of the process. However, the symmetry of wafer to wafers does not exist. And the chip that needs to be processed is obvious, and the wafer is thin enough, and the calibration process becomes much easier. It can be seen from the above introduction that the first -hole technology and the back -passing process have their own characteristics. Therefore, in the process of integration of the actual circuit, the stacking method should be reasonably selected according to different needs. 5. The advantages and challenges of wafer -level 3D integrationDifferent from the traditional two -dimensional packaging technology, the wafer -level three -dimensional integration provides more advantages, including:(1) Multiple different devices connect to each other in the vertical direction, shorten the interconnection, and reduce the visible surface, thereby narrowing the size of the chip and increasing the integrated density. (2) The shortening of connection between the chips has accelerated the speed of chip processing. (3) Low power consumption and higher operating speed brought by low -resistance. (4) The overall size is small, reducing the integrated cost. However, the challenges such as cooling problems, alignment methods, materials selection, and three -dimensional design CAD tools, design and testing methods brought by high integration density still need to overcome. 6. ConclusionDue to the restrictions of traditional methods, industry cannot integrate many circuits as much as before. Three -dimensional integration technology provides a new version of the new version that can continue Moore's law. The TSV interconnection technology in 3D integration can directly connect the chip in the vertical direction, which greatly improves the integrated density and reduces the size of the integrated circuit. However, three -dimensional integration also faces many technical challenges, such as material selection, heat dissipation problems and testing methods. With the efforts of the industrial and academic circles, three -dimensional integrated technologies with small advantages such as small appearance, high density, and low cost, have very broad application prospects in high -performance and low -power next -generation integrated circuit revolution.For more electronic conponents,please refer to:https://www.ciselec.com/en/products.html
0
Ten key steps for manufacturing semiconductor chips
03
18
1. Design and mask productionThis process starts with chip design. The engineer creates a detailed layout design to specify the placement and interconnection of transistors, resistors and other components. The engineer will use the design to create a mold cover as a template that defines the pattern on the semiconductor wafer during the manufacturing process. 2. Worse preparationThe engineer uses silicon wafers as a substrate to undertake the task of polishing and cleaning to eliminate any impurities. Next, a thin layer of oxidation layer will be formed on the surface of the silicon wafer. It provides a smooth and uniform starting point for subsequent process steps. By controlling the formation of the oxidation layer, it can ensure the physical and chemical characteristics of the need, and provide a good foundation for subsequent deposition and pattern transfer. 3. Light carvingsDuring the light engraving, engineers will use the previously created mask to complete the key image transfer steps. First of all, they apply a layer of light glue on the wafer surface and place the mask on the lithography glue. Subsequently, through a specific light source and lens system, the pattern on the mask was exposed on the optical glue on the wafer surface. This exposure process makes the pattern on the mask be accurately transferred to the light glue. Next, selectively remove the exposure or unre exposed area through the development steps. After the development, the pattern on the lithography glue is retained on the wafer surface, providing accurate guidance for subsequent etching and material removal steps. 4. CaptiveThe etching is used to remove the material from the wafer that has been selectively removed. In order to create the required patterns, engineers use a variety of different etching processes to handle different materials, such as silicon, polysilicon and metal layer. By accurately controlled the etching process, the material can be ensured accurately, thereby forming accurate patterns and structures. 5. depositsChemical gas deposition (CVD) or physical gas sedimentation (PVD) and other technologies have deposited thin films (such as metal or insulating layers) on the surface of the wafer surface. These sedimentary layers form the conductivity, insulation layer and other components of semiconductor devices. 6. ion injectionThis step involves a specific area where the doping agent is introduced into the wafer to change its electrical performance. Ion injection is incident with a certain energy -scale ion beam. A series of physical and chemical interactions occur with the atoms or molecules in the material, which changes the surface component, structure and performance of the material, so as to optimize the surface performance of the material, or obtain a certain certain Some new excellent performance. Ion injection is essential to generate the required transistor characteristics. 7. EnemiesAfter the injection phase of the ion is injected, the wafer will be treated with high temperature annealing. The main purpose of this step is to activate any structural damage caused by doping agents and repair the injection process. Through annealing treatment, the defects caused by ionic injection were repaired, and the integrity of the wafer was restored, laying the foundation for subsequent manufacturing steps. 8. Chemical mechanical polishing (CMP)CMP is responsible for ensuring the smoothness and uniformity of the wafer surface. The main task of this step is to eliminate any protruding or depression on the surface and create a smooth and uniform surface. A smooth and uniform surface can reduce defects, improve electrical performance, and enhance long -term stability reliability of semiconductor devices. 9. Measurement testDuring the semiconductor manufacturing process, engineers will conduct a series of measurements and inspections to ensure that each step meets the required specifications and standards. This involves the use of highly accurate and complex tools to check the size, layer thickness, material purity, and other key parameters. The accuracy of measurement and inspection is essential for creating high -performance and reliability semiconductor devices. 10. PackingFinally, come to the packaging and testing session, and prepare for distribution and use. Packaging is a key step to protect the chip from environmental impact, and at the same time, it is necessary to ensure that its electrical and thermal performance meets the design requirements. With the continuous progress of technology, the packaging process is also developing to meet the needs of smaller and high -performance semiconductor devices.For more electronic conponents,please refer to:https://www.ciselec.com/en/products.html 
0
What is FPGA?
02
24
FPGA represents the on -site programming door array. In essence, FPGA is a set of interconnected digital sub -circuits that can achieve common functions and also provide very high flexibility. But it is necessary to fully understand FPGA. More subtle differences. This article introduces the concept behind FPGA, and briefly discusses what logical door is, how to program FPGA, and the difference between FPGA and microprocessors in design. FPGA and microcontroller (or, microcontroller can be used, why use FPGA?)Micro controller has become a leading component in modern electronic design. They are cheap and widely used. Now they are often used as a person's first introduction to the electronic world. We naturally continue to use the components we are familiar with, and as the microcontroller becomes stronger and stronger, there is no need to consider alternative solutions to cope with our design challenges. Nevertheless, the microcontroller is built around the processor. There are some basic restrictions in the processor. You need to recognize these restrictions. In some cases, these restrictions need to be overcome. So, when will engineers choose FPGA instead of microcontroller? The answer is attributed to software to hardware. The processor performs the task by performing instructions in order. This means that the operation of the processor is inherently limited: the desired function must adapt to the available instructions, and in most cases, it is impossible to complete multiple processing tasks at the same time. The microcontroller is constructed around a processor, the processor is constructed around a CPU, and a CPU performs one operation at one time. The instruction set is designed to be highly general, and the instructions can now be executed at a high frequency; however, these characteristics do not eliminate the shortcomings of software -based digital design methods. Another choice is a method of hardware. If each new design can be constructed around a digital IC that realizes the function required by the system, it will be very convenient: there is no need to write software, no instruction set restrictions, no delay, only one input pin, output output, output, output The IC of the digital circuit corresponding to the accurate operation of the pin and the necessary operation. This method is unrealistic because it needs to design an ASIC (special integrated circuit) for each circuit board. However, we can use this method to use FPGAS. What is the on -site programming door array?A good name can provide a lot of information. I think the "on -site programming door array" is a very good name. FPGA is a logical door array (eh, it is considered to see below), this array can be the program program (in fact, "configuration may be a better word) People come to complete. Let's take a closer look at these basic characteristics. Logic doors (with, or, different, etc.) are the basic components of digital circuits. Therefore, a digital device designed to achieve high configuration (that is, "on -site programming") consists of many custom -made ways. It is not surprising. However, FPGA is not a huge collection of a single Boors. This will be a very good way to provide configurable logic functions, because it does not use such a fact, that is, public operations can be achieved as a fixed module more effectively. The same principle is also obvious in the field of separate digital ICs. You can buy ICs composed of door, or door, but you don't want to use a single door to build a displacement register. Instead, you will buy a shift register integrated circuit. Therefore, FPGA is not just a door array. This is a series of carefully designed and interconnected digital sub -circuits that can achieve common functions efficiently while providing extremely high flexibility. Digital subcourse is called configurable logic module (CLB), which constitutes the core of FPGA programming logic function: CLB needs to interact with each other and interact with external circuits. For these purposes, FPGA uses a programmable interconnection matrix and input/output (I/O) module. FPGA's "program" is stored in the SRAM unit, affecting the function of CLB, and controlling the establishment of a connection path. Detailed explanation of the internal structure and operation of CLB requires a whole article (if it is not multiple articles). The general idea is that the CLB includes a multi -way reusrator that searches tables, storage elements (triggers or registers), and allows CLB to perform Boolean operations, data storage and arithmetic operations. The I/O module consists of various components to facilitate communication between CLB and other components on the board. These devices include pull/drop -down resistor, buffer and anti -phase device. On -site programming logic (or in other words, how to program FPGA?)How do we turn a CLB array into a digital circuit and make it accurately complete the function we want? At first glance, this seems to be a quite complicated task. In fact, FPGA is often considered more difficult than micro -controller programming. However, FPGA development does not need to completely understand the CLB function or internal interconnect, just as the micro -controller development does not require a thorough understanding of the processor's assembly language instructions or internal control signals. In fact, FPGA is misleading as an independent component. FPGAS is always supported by development software, and the software executes the complex process of transforming hardware design into a programming position that determines the programming position of interconnection and CLB behavior. Hardware description languagePeople have created language so that we can "describe" hardware; they are called (very appropriate) hardware description language (HDLS), the two most common are VHDL and Verilog. Although there are obvious similarities between HDL code and the code written in advanced software programming language, the two are fundamentally different. The software code specifies a series of operations, and the HDL code is more like a schematic diagram. Using text to introduce components and create interconnection. in conclusionThe basic characteristics of programming logic devices and the potential advantages of the system of the processor -based system. Hyundai FPGA is a complex high -performance device. It may be a bit daunting for those who are accustomed to collecting data, control ASIC and performing mathematical operations. However, it may be found that in certain applications, the improved performance and multifunctionality are worthy of design work.resolution, stability and anti -interference ability of the identification system. At this point, the virtual Digital Technology proposes the high -precision application of deep learning algorithms in the visual of the machine. In this context, the DLIA industrial defect detection plays a decisive role.The DLIA industrial defect detection By constructing a deep neural network model, the system can automatically learn and extract features from massive training samples, thereby achieving precise identification of complex and fine characters on the chip surface. Even in the face of image quality fluctuations caused by light change, angle deviation, or surface reflection, deep learning algorithms can be quickly adapted and made accurate judgments.With the deep fusion of machine vision and deep learning, the degree of automation and accuracy of chip surface character recognition has been greatly improved, significantly improved production efficiency, reducing human error risk, and providing details for subsequent product quality management and process optimization of process optimization. Reliable data support.This deep learning -enabled machine visual technology breaks through the limitations of traditional character recognition in accuracy and speed. Even the most subtle scratches, pollution or deformation can be discovered and recorded in time, which greatly improves the level of surface quality control level It effectively reduces the rate and repairs in the production process.The surface character recognition of the chip, as an important application scenario of machine vision technology in the microelectronics manufacturing industry. With its excellent performance of fusion and deep learning, it has become one of the key driving drivers for the high -quality development of the industry. New era of industrial quality inspection.For more electronic conponents,please refer to:https://www.ciselec.com/en/products.html
0
Surface character recognition of chip, high -precision application of machine vision
02
22
In the field of modern micro -electronics manufacturing, the surface character recognition of chip is a vital process. It is related to multiple key links such as product information traceability, anti -counterfeiting verification and quality control. With the advancement of science and technology, especially the development of machine vision and deep learning technology, this problem that originally relied on artificial or traditional optical recognition methods has been efficient and accurate.Machine vision technology captures small character images on the surface of the chip through precise industrial cameras, and combines advanced image processing algorithms to analyze the collected data in real time. However, the surface characters on the chip are often tiny and tightly arranged, putting forward extremely high requirements for the resolution, stability and anti -interference ability of the identification system. At this point, the virtual Digital Technology proposes the high -precision application of deep learning algorithms in the visual of the machine. In this context, the DLIA industrial defect detection plays a decisive role.The DLIA industrial defect detection By constructing a deep neural network model, the system can automatically learn and extract features from massive training samples, thereby achieving precise identification of complex and fine characters on the chip surface. Even in the face of image quality fluctuations caused by light change, angle deviation, or surface reflection, deep learning algorithms can be quickly adapted and made accurate judgments.With the deep fusion of machine vision and deep learning, the degree of automation and accuracy of chip surface character recognition has been greatly improved, significantly improved production efficiency, reducing human error risk, and providing details for subsequent product quality management and process optimization of process optimization. Reliable data support.This deep learning -enabled machine visual technology breaks through the limitations of traditional character recognition in accuracy and speed. Even the most subtle scratches, pollution or deformation can be discovered and recorded in time, which greatly improves the level of surface quality control level It effectively reduces the rate and repairs in the production process.The surface character recognition of the chip, as an important application scenario of machine vision technology in the microelectronics manufacturing industry. With its excellent performance of fusion and deep learning, it has become one of the key driving drivers for the high -quality development of the industry. New era of industrial quality inspection.For more electronic conponents,please refer to:https://www.ciselec.com/en/products.html
0
0755-83699599
sales1@717ic.com