Four disruptive technologies to change semiconductor engineering!
05
09
As the competition in the global electronics manufacturing industry has become more and more intense, in order to maintain the competitive advantage, many companies are continuously rolling. The development cost of semiconductor products is becoming higher and higher, and development has become more and more complicated.So, how do those subversive technologies affect the current strategies of these companies and how do they change their current engineering methods? 一、The semiconductor development competition has intensifiedFaced with problems such as labor shortage, delay in supply chain, and lack of materials, chip manufacturers are compete for new and improved semiconductor products.Small companies work hard to seek to gain a foothold in the industry, Intel, Samsung, Apple and TSMC (TSMC) leading companies such as markets are seeking competitive advantages. According to the recent report, to maintain a leading position in the industry, TSMC is still the first choice for industry analysts.However, its competitors are rapidly narrowing the gap.As Moore's Law touches the ceiling, the limitations of technology are overtaken the potential of innovation, and the business feasible choices are less and less.If any of these companies have made substantial progress in the semiconductor engineering field, they may subvert the entire global electronic manufacturing industry——This means that they either promote the industry to a new niche market, or in the process of leading companies to find a new foothold, causing unconventional explosive growth.If an enterprise wants to occupy a place in the semiconductor market, the cost is getting higher and higher.From 2019 to 2022, the manufacturing cost increased by 7%, and the import price rose by 5.7%.Some disruptive technologies may provide a method for enterprises to meet the growing demand and logistics pressure that affects its profitable. 二、Four technologies of subverting semiconductor engineeringSome new technologies will subvert the design, production and distribution of semiconductor products, which will have a significant impact on the electronic manufacturing industry. 1. Self -healing, deformable soft composite materialsA research team at the University of Carnegie Mellon developed a new type of soft composite material with high electrical and thermal conductivity by combining liquid elastic body and small liquid droplets of cricket alloy.They name their results as their resultsThubber.Thubber's performance is similar to liquid silicon rubber (the operating temperature range is -175 ° C to 205 ° C), which can maintain its flexibility in the range of -80 ° C to 200 ° C.The current can cause internal heating when the current is through the Thubber, which causes phase -changing reactions, so there is no need for external thermal sources.When it is difficult to use thermal oil or aluminum plate, it can be made into a super flexible thin film. 2. Wrap the carbon nanotubes with a belt polymerResearchers at Duke University recently launched a new type of carbon -based semiconductor development.This micro -cylinder composed of carbon atoms is stronger than steel, but the width is only one -fourth of the hair wire, which is of great significance for electronic manufacturing.Previously, because the micro -cylindrical body composed of carbon atoms could not be cut off, they limited their application in the electronics field, so they did not have commercial value.The research team changed its electronic characteristics from the conductor to semiconductor by wrapped a special spiral polymer around the metal nanotuba, which solved this problem. 3. Use a glass substrate for semiconductor packagingGlass is cheap, has good thermal performance, and has a physical characteristics similar to silicon.It can also maintain the shape for a long time, and can hardly deform or degenerate, which can improve the life and performance of electronic products.Compared with today's organic base, the glass base has higher signal performance, which is why the glass base is gradually popularized in advanced semiconductor packaging solutions.For emerging applications that require high -density and high -performance interconnection in the next generation of electronic products, glass substrate is an ideal choice. 4. Two -dimensional iron electric field effect crystal tubeChip manufacturers compete for emerging trends to apply artificial intelligence technology to micro -chip to challenge semiconductor engineering, because their resource -intensive characteristics have caused their energy consumption costs.The development of the two -dimensional iron electric field effect crystal pipe may help solve this problem.This technology uses the electrical characteristics of oxide and sulfide.Their gradual ability to switch iron electrical categories makes them operate 10,000 times faster than human sympathy, and at the same time, energy consumption is extremely low, which opens a new world for the development of nano -level ultra -low power consumption and high -precision artificial neurophants. 三、Are these subversive technologies have the potential for commercialization?Like all other disruptive technologies, the new methods of these semiconductor projects must have long -term business feasibility to cause people's interest, or to maintain competitiveness in front of leading companies for a long time.In most cases, these emerging technologies will have a long listing time because they are designed for the next generation of electronic products.As far as the carbon nano -nanotone wrapped in a polymer, researchers admit that their novel development methods may be far from practical applications.The situation of the glass substrate used for semiconductor packaging is the same, and problems such as stress and accumulation limit have limited its commercial feasibility.For some people in the industry, these disruptive technologies have a long market time that may be frustrated, but they are still hopeful.After all, the growing distress itself is part of the progress of the progress of semiconductor engineering.As these technologies continue to cause people's interest, the possibility of accelerating development is very high.For more electronic conponents,please refer to:https://www.ciselec.com/en/products.html 
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Chinese chip production capacity may become the first in the world!
05
06
On the global chip industry's competitive track, China is moving towards a new peak at an unprecedented speed and determination.Recently, some predictions point out that byIn 2026, mainland China is expected to become the country with the largest capacity of tablet computers in the world.This news undoubtedly depicts a bright blueprint for the future development of the Chinese chip industry. The competitive situation of the global chip industryThe chip industry, this is known asThe technology of technology and grain is becoming the focus of global science and technology competition.Although the United States occupies an hegemonic position in the chip field, China's rise is gradually changing this situation.Especially after Huawei and other Chinese technology companies have encountered international market restrictions, China's independent research and development and production capacity expansion of the chip industry are particularly important. The rapid growth of Chinese chip production capacityMainland China has invested a lot of resources in the research and development and production of the silicon wafer industry, including building advanced production bases, introducing high -end talents, and strengthening cooperation with international silicon wafers.These measures have laid a solid foundation for the rapid growth of wafer capacity in mainland China. The Chinese government's strategy and supportChinese government adoptedThe Made in China 2025 plan clarifies the strategic goal of changing China's manufacturing industry from a large change to a strong.In this plan, the chip industry is listed as a key development industry. The government encourages enterprises to increase research and development investment and promote technological innovation through various methods such as financial support and tax benefits. Challenges and opportunities of the chip industry in mainland ChinaAlthough the chip industry in mainland China has a strong development momentum, there is still a gap between the world's leading level in the field of storage chips and advanced logic chips.In order to shorten this gap, China must continue to work hard in optimizing the supply chain, improvement of technical level, and cultivating talents. Future Outlook: Global Character in the Chinese Chip IndustryOn this battlefield with fierce competition in the global chip industry, mainland China is injecting fresh blood into the world's scientific and technological pattern with its rise.With the continuous progress of technology and the continuous expansion of the market, mainland China is expected to play a more important role in the global chip industry. The rise of Chinese chip production capacity is not only a manifestation of scientific and technological strength, but also a key step in the national strategic layout.We look forward to more breakthroughs in the Chinese chip industry in the future and bring more innovation and vitality to the global technology market.For more electronic conponents,please refer to:https://www.ciselec.com/en/products.html
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The main characteristics and working principles of thermal resistance
04
18
What is thermal resistance?Thermal resistance is a category of sensitive components. The resistance value of thermal resistance will change with the temperature. Unlike the general fixed resistance, it is a category of variable resistors and is widely used in various electronic components. Different from pure metals in the resistance thermometer, the materials used in thermal resistors are usually ceramics or polymers. The higher the temperature coefficient thermistor, the greater the resistance value when the temperature, the lower the thermistor of the negative temperature coefficient when the temperature is, the lower the resistance value, and they belong to the semiconductor device. The thermal resistance is usually a higher accuracy within a limited temperature range, usually -90 ° C? 130 ℃. The main characteristics of thermal resistance1. High sensitivity, its resistance temperature coefficient is more than 10 to 100 times larger than the metal, which can detect temperature changes at 10-6 ° C;2. The working temperature range is wide, the normal temperature devices are applicable to -55 ℃ ~ 315 ℃, the applicable temperature of high temperature devices is higher than 315 ℃ (currently can reach 2000 ° C), and low temperature devices are suitable for -273 ° C to -55 ° C;3. Small volume, can measure the temperature of the gaps, cavity and biological blood vessels that other thermometers cannot measure;4. Easy to use, the resistance value can be selected arbitrarily between 0.1 ~ 100kΩ;5. Easy processing into complex shapes can be produced in large quantities;6. Good stability and strong overload capacity. The principle of thermal resistance working principleThermal resistance is a sensor resistor, the resistance value of thermistor, which changes with the changes in temperature, which is different from the general fixed resistance. The resistance value of the metal increases with the increase of the planting, but the semiconductor is the opposite. Its resistance value has decreased sharply with the increase of temperature, and it presents non -linear. When the temperature changes are the same, the resistance value of the thermistor resistance is about 10 times the lead thermal resistance. Therefore, it can be said that thermistor is particularly sensitive to changes in temperature. This temperature characteristics of semiconductor. It is because the conductive method of semiconductor is carrier (electronics, cave) conductive. Because the number of carriers in semiconductors is much less than free electrons in metals, its resistance is very large. As the temperature rises, the number of carrier flows participating in semiconductors will increase, so the semiconductor conductivity increases, and its resistivity will decrease. Thermistor is a thermist component made of the characteristics of the semiconductor resistance with the temperature of the semiconductor. It is made of different metal oxides according to different formulas. Within a certain temperature range, according to the changes in thermal resistance value, the temperature changes of the measured medium can be known. When installing the thermistor in the circuit, when the thermistor is the same as the ambient temperature, the action time is sharply shortened as the current increases; when the thermistor has a shorter action time and smaller when the ambient temperature is relatively high at the relatively high ambient temperature Maintain current and action current. When the circuit is working normally, the thermistor temperature is similar to the room temperature and the resistance is small, and the connecting the circuit will not hinder the passing of the current; when the circuit occurs due to the failure, the thermistor is increased due to the increase in thermal power. When the temperature exceeds the switch temperature, the resistance will increase in an instant, and the current in the circuit will quickly decrease to the safe value.For more electronic conponents,please refer to:https://www.ciselec.com/en/products.html
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Classification and application of sensors
04
16
There are many classification methods of sensors. There are usually 4 methods:1. Divided into: displacement sensor, pressure sensor, speed sensor temperature sensor and gas sensitive sensor according to the input physical quantity. 2. Based on the working principle: resistance, inductance, capacitance, and potential. 3. Based on the nature of the output signal: analog sensor and digital sensor. 4. Based on the principle of energy conversion, it is divided into: active sensors and passive sensors. The source sensor converts non -electrical energy to electrical energy, such as electric momentum, charge -type sensors, etc.; The passive sensor does not afford the energy conversion effect, but the amount of non -electrical volume is rotated to the number of electrical parameters, such as resistance, inductive sensors The types of commonly used sensorsUsually, according to its basic perception function, it can be divided into ten major ten major majority of thermist components, optical components, osteitted components, Lijin components, magnetic sensitivity elements, wet sensitivity components, sound sensitivity elements, radiation sensitive components, color sensitivity components, and Weimin components. kind. 1. Heat sensorThe thermist sensor is a conversion device that converts temperature into a telecommunications signal, which can be divided into two categories: active and passive. The former's working principle is thermal release effect, thermal power effect, and semiconductor knotting effect. The working principle of the latter is the thermal characteristics of the resistance, accounting for about 55%of the thermist sensor. This sensor is more applicable in the occasion where the temperature detection accuracy is relatively high. The broader thermal resistance materials are platinum, copper, nickel, etc. They have the characteristics of large resistance temperature coefficients, good linearity, stable performance, wide use temperature range, and easy processing. It is used to measure temperature within the range of -200 ℃ ~+500 ℃. 2. Optical sensorThe light sensor is one of the most common sensors. There are many types, mainly: optical pipes, photoelectric multiplication pipes, photoresist resistance, solar cells, solar batteries, infrared sensors, ultraviolet sensors, fiber optoelectronics sensors, color sensors, CCDs and CCD and CMOS image sensor, etc. Major domestic manufacturers include the OTRON brand. The light sensor is one of the most output and the most widely used sensor. It occupies a very important position in automatic control and non -electrical electricity testing technology. The easiest light sensor is the light resistance, and the current will generate current when the photon shock junction is generated. 3. Qi -sensitive sensorQi -sensitive sensor is a sensor used to detect gas concentration and ingredients, which plays a very important role in environmental protection and safety supervision. The gas -sensitive sensor is exposed to the gas of various ingredients. Because the temperature and humidity of the detection site have changed a lot, there are a lot of dust and oil mist, so their working conditions are harsh, and the material of the gas to the sensing element is material. Chemical reactions are generated, attached to the surface of the component, often making their performance worse. Therefore, there is the following requirements for the gas -sensitive sensor: it can detect the allowable concentration of the alarm gas and the gas concentration of other standard values. It can work stable for a long time, good repetitiveness, fast response speed, and small effects caused by coexisting substances. 4. Limin sensorLimin sensor is a conversion device that converts mechanics such as stress and pressure into a electrical signal. The Limin sensor has various forms such as resistance, capacitance, inductance, voltage and current, and they each have advantages and disadvantages. It is widely used in various industrial self -control environments, involving water conservancy and hydropower, railway transportation, smart buildings, production self -control, aerospace, military, petrochemical, oil wells, electric power, ships, machine tools, pipelines and other industries. 5. Magnetic sensorHall sensors are a magnetic field sensor based on Hall effect, which is widely used in industrial automation technology, detection technology and information processing. Hall effect is the basic method of studying the performance of semiconductor materials. The Hall coefficient measured by Hall effect experiment can judge important parameters such as conductive type, load concentration, and load migration rate of semiconductor materials. The Hall effect sensor is a passive sensor. It must have external power supply to work. This feature allows it to detect the operation of low speed. 6. Wet sensitivity sensorThe wet sensor sensor can feel the external humidity changes and change the humidity into a device with the physical or chemical properties of the device material into a device with a useful signal. The characteristic requirements of the ideal wet sensitivity sensor are suitable for use within the wide temperature and wet range, and the measurement accuracy should be high; long service life and good stability; fast response speed, small wet stagnation difference, good reproducibility; sensitivity High, good linear, small temperature coefficients; simple manufacturing process, easy to produce in batches, simple conversion circuits, low cost; corrosion resistance, low temperature and high temperature characteristics, etc. 7. Sound sensorSound sensor is a sensor used for flow detection. The sensor can be set with power when wiring, and operates in a range mode of high/low sensitivity. The high -sensitivity volume is suitable for high -frequency signals that fluctuate at 40dB. The low -sensitivity range is applied to high -frequency signals from 28DB to 68DB. The sensor can operate alone by providing external power supply to control the device. Sound sensor is mainly used for solid flow detection. At the same time, the device can also be used for the detection of water pump air erosion and liquid leakage, and then generates sufficient sound alarm. 8. Radiation sensorAfter the material is radiated, it is irradiated. Some characteristics (such as refractive index) change. Collective referred to as radiation effects. For example, after some special ingredients (fiber -doped fiber) made of special ingredients, the refractive index changes. The receiving light intensity changes, so it can be made into a fiber radiation sensor. The role of radiation and material is the basis of all nuclear radiation sensors. 9. Visual sensorThe visual sensor has a pixel that captures the light from a whole image. The clearness and delicateness of the image are usually measured by resolution, which is represented by the number of pixels. The low cost and ease of visual sensor have attracted machine designers and craft engineers to integrate them into various types of applications that have relying on artificial, multiple photoelectric sensors, or unbridled applications at all. The industrial applications of visual sensors include inspection, measurement, measurement, directional, defect detection and separation. 10. Weimin sensor (electronic tongue)The electronic tongue is an analog tongue to analyze, identify and judge the sample measurement of samples, and use multiple statistical methods to process the obtained data, quickly reflect the overall quality information of the sample, and realize the identification and classification of samples. It is a detection technology based on the overall characteristics of the sample as the overall characteristic response signal that uses the multi -sensing arrays as the foundation to perceive the overall characteristics of the sample. It is mainly composed of three parts: the taste sensor array, the signal acquisition system and the mode recognition system.For more electronic conponents,please refer to:https://www.ciselec.com/en/products.html
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Film 3D integrated circuit key technology
03
20
1. BackgroundIn recent decades, with the development of micro -electronic technology, high -performance, small, and low -cost electronic products have become the basic demand for the market. The number of components can be accommodated on the integrated circuit that meets the prediction of Moore's law. However, in recent years, the growth trend of traditional integrated circuits has begun to have different models from the ideal model of Moore's law. With the rapid development of mobile phones and various electronic products, the functions of chips are becoming more and more complicated. The number of transistors on the chip is increasing, and it has also caused the increase in the volume of integrated circuits and increased power consumption. When the grid length and oxidation layer thickness of the transistor is close to the physical limit, the two -dimensional integration will eventually reach the end of the road. The three -dimensional integration technology that follows Moore's law can be used as a solution to the above problems. The concept of the three -dimensional integration method is based on the new position of the integrated circuit: Z axis. This means that the location of the chip is no longer limited to the X-Y two-dimensional plane. Therefore, we can achieve a larger density integrated circuit stack to shorten the interconnection and reduce the visible surface, thereby reducing the size of the chip and improving the efficiency of the chip, thereby improving the application range. In addition, the three -dimensional integrated scheme can combine the optimal process of different integrated circuits itself to avoid the problem of low efficiency and low yield. Although three -dimensional integration has many advantages, its material selection, the physical design and testing methods of thermal drive are the current problems to be solved. This article summarizes the wafer -grade three -dimensional integrated circuit technology. In three -dimensional integration technology, the popular and highly reliable popular technology is silicon -based perforation technology. In the following narrative, this key technology will also be introduced. At the same time, several different types of wafers and stacking methods, as well as challenges such as test methods, reliability, material selection such as 3D integration. This information will provide guidelines and reference for researchers interested in this area. 2. The key technologies for wafer -level 3D integrationThe wafer -level three -dimensional integration is a new concept that uses many advanced technologies to increase the increase in circuit density and the size of the volume. In this article, the three most important technologies are introduced. 2.1 Apity and key combinationPoor circuit failure or reliability in uncertainty. Therefore, the yield of the chip contact area and the three -dimensional integrated circuit stacked by the high and low of the accuracy. The accuracy of the alignment is related to the alignment marker. It is also affected by the personal experience of the operator. Copper is widely used in standard CMOS manufacturing. Therefore, copper is the best choice to connect two device layers or wafers in three -dimensional integration. The principle of the copper wafer bond is to make two chips contact and then heat up. During the key combination, the copper layer of the two chips can diffuse from each other to complete the key combination process. The integration quality is related to the cleanliness and bonding time of the wafer surface. Generally speaking, the temperature can be completed at least 300 to 400 ° C. You can determine the key quality according to the form of the interface. In order to obtain the results of the combined copper chip bond, the condition is heated for 30 minutes at 400 ° C, and then annealing at 400 ° C nitrogen environment for 30 or 60 minutes. Although high temperature and high voltage may improve the quality of the bonding, the corresponding cost and the loss of equipment have also become the main problems that need to be concerned. Therefore, the key combination method at lower temperature and pressure is the main purpose of three -dimensional integration. 2.2 Wall thinning technologyThe three -dimensional integration technology has greatly increased the density of integrated circuit and also brings the problem of heat dissipation difficulties. Due to the resistance between the silicon -based plate and the metal material, when the current is passed, there will be a thermal effect. The constant heat generation will cause a internal stress on the back of the chip, and when the internal stress is large, it will directly rupture the chip and speed up the damage speed of the chip. By using the chip thinning process, not only can effectively reduce the internal resistance of integrated circuits, optimize the heat dissipation performance of each chip, but also improve the stability of the circuit and reduce the chip volume, and it is more in line with the trend of the overall miniaturization of the integrated circuit. 2.3 Silicon -based Plate Passage Technology (TSV)Silicon -based perforations (TSV) Make vertical pupils between chips and chips, between wafers and wafers to achieve the technology of interconnection between chips. This technology can maximize the density of the chip stacking in the three -dimensional direction. Therefore, after the chip of different substrates is integrated with a three -dimensional stack through the perforation technology of the silicon -based plate, it can not only shorten the metal wire and connected resistance, but also reduce the size of the chip. (1) First through the holes. The first -hole technology is to complete the pore production and the filling of the conductive material on the blank silicon wafer before the CMOS device is made. In this scheme, filling materials cannot be metal, such as copper. In addition, since there is no metal interconnection at this stage, the longitudinal width ratio of the hole process is less than the rear hole process. (2) Lacofori process. After the Beol is completed, the CMOS is about to be completed and the silicon wafer that is about to be completed and but has not yet been thinned. This technology includes drilling and filling process. In order not to damage equipment and circuits, it should be produced at a temperature environment lower than the thermal budget. (3) TSV process process. The perforation of the entire silicon -based plate can be roughly divided into two parts: the first part is the etching of the hole, and the second part is filled with the hole. The erosion of the perforation of the silicon -based plate depends on the thickness of the wafers after thinning. When the target etching depth is too deep, the opening size of the pores needs to be expanded accordingly, which also leads to an increase in chip size. Filling materials are also a problem that needs to be considered. Copper, tungsten, and polysilicon are typical silicon -based plate perforation filling materials. Among these materials, copper and tungsten can only be used in the rear hole scheme, and polysilicon can be used in the pores and the rear hole scheme.Copper is a compatible material, with fewer residual stress and good electronic performance, but it is difficult to fill the high -vertical width ratio. On the contrary, tungsten is easy to fill the high -width ratio, but its residual stress is a big problem. Polycrystalline silicon can be used in the athletic scheme of the perforation of the silicon -based plate, but its resistance is higher than the metal. Considering the advantages and disadvantages of each material, the choice of silicon -based plate perforated filling materials is of great significance for three -dimensional integration, especially for wafer -level three -dimensional integration. TSV preparation specific process steps are:(1) Thin the chip through the grinding and etching process.(2) Plugs on the chip through the laser melting method or reflecting the ion etching method.(3) Use the plasma chemical chemical gas sedimentation method (PECVD) to create the insulation layer on the side wall of the hole.(4) Remove the substrate oxidation layer at the bottom of the hole to expose the metal layer.(5) Fill the copper metal into the hole in the pores.(6) Remove the copper metal on the surface of the chip through chemical machinery grinding and etching. 3. Classification of wafers(1) Silicon. Body silicon is the most commonly used wafer material in wafer -grade three -dimensional integration. The reason is not only at its cost, but also a mature production process. Even when other types of chips are used as top chips, the bottom chip is usually a silicon chip. (2) Insulation silicon (SOI). The surface of the SOI chip has a covered oxidation layer that can be uniformly reduced, because the oxidation layer plays a role in hindering etching. The etching process can use mechanical grinding, wet etching, and dry etching. The most important thing is that the final thickness can be evenly reduced, and the use of SOI can achieve high -density three -dimensional integration. The SOI structure can effectively avoid the phenomenon of locking. However, the anti -static capacity of stacking structures may be reduced, and dense equipment layers also have potential heat dissipation problems. (3) Glass. Glass wafer in 3D integration is usually used to place top chips. Therefore, glass wafers used for this purpose are called carrier wafers. When the glass is temporarily attached to the top wafers, you can reduce the substrate of the top wafer. After the thin wafer bond is closed at the bottom of the wafer, remove the glass. The transparent characteristics of glass wafers also helps the results of good key combination. For various types of wafer stacks, we should notice that if any charger is exposed or the wafer is close to the wafer, the wafer may generate inductive charge. In the stacking process of two wafers, as long as a chip is charged, the electrostatic discharge event may occur. 4. Walls and stacking methodsAccording to the stacking direction of the two chips, it is divided into two different stack chips: face -to -face and face. The impact of the chip stacking direction is very huge, which will affect the symmetry of the circuit, the difficulty of manufacturing, and the interconnection of the capacitance. Both stacking methods have been applied to three -dimensional integrated applications. Even the common use of the two stack methods exists. (1) Facial stacking method. For these types of chips, the metal layer (facial) of the two chips is connected in the circuit through TSV. From the perspective of manufacturing technology, this integration method is easy to invest and does not require additional processing chips. But it is necessary to consider the symmetry of wafers to wafers. This means that when designing the top chip, the circuit needs to perform mirror operation. At the same time, we must also consider the symmetry and confrontation of the two chips. (2) Facing the back stacking method. Facing the back wafer, the metal layer (face) of a chip is connected to the substrate (back) of another chip through the TSV, and the wafer (wafer or top wafer) should be thinned. Compared with the face type, this method increases the complexity of the process. However, the symmetry of wafer to wafers does not exist. And the chip that needs to be processed is obvious, and the wafer is thin enough, and the calibration process becomes much easier. It can be seen from the above introduction that the first -hole technology and the back -passing process have their own characteristics. Therefore, in the process of integration of the actual circuit, the stacking method should be reasonably selected according to different needs. 5. The advantages and challenges of wafer -level 3D integrationDifferent from the traditional two -dimensional packaging technology, the wafer -level three -dimensional integration provides more advantages, including:(1) Multiple different devices connect to each other in the vertical direction, shorten the interconnection, and reduce the visible surface, thereby narrowing the size of the chip and increasing the integrated density. (2) The shortening of connection between the chips has accelerated the speed of chip processing. (3) Low power consumption and higher operating speed brought by low -resistance. (4) The overall size is small, reducing the integrated cost. However, the challenges such as cooling problems, alignment methods, materials selection, and three -dimensional design CAD tools, design and testing methods brought by high integration density still need to overcome. 6. ConclusionDue to the restrictions of traditional methods, industry cannot integrate many circuits as much as before. Three -dimensional integration technology provides a new version of the new version that can continue Moore's law. The TSV interconnection technology in 3D integration can directly connect the chip in the vertical direction, which greatly improves the integrated density and reduces the size of the integrated circuit. However, three -dimensional integration also faces many technical challenges, such as material selection, heat dissipation problems and testing methods. With the efforts of the industrial and academic circles, three -dimensional integrated technologies with small advantages such as small appearance, high density, and low cost, have very broad application prospects in high -performance and low -power next -generation integrated circuit revolution.For more electronic conponents,please refer to:https://www.ciselec.com/en/products.html
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